Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High2k Gate Stacks
نویسندگان
چکیده
A quantum model based on solutions t o t he SchrÊdinger2Poisson equations is develop ed t o investigate t he device behavior related t o gate tunneling cur rent f or nanoscale MOS F ETs wit h high2 k gate stacks . This model can model various MOS device st ructures wit h combinations of high2 k dielect ric materials and multilayer gate stacks , revealing quantum effects on t he device perf ormance . Comp arisons are made f or gate cur rent behavior between nMOSF ET and p MOSF ET high2 k gate stack st ructures . The results p resented are consistent wit h exp erimental da2 ta ,w hereas a new f inding f or an op timum nit rogen content in HfSiON gate dielect ric requires f urt her experimental
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